Transcend 1GB DDR2 667 CL5 soDIMM

The TS128MSQ64V6J is a 128M x 64bits DDR2-667 SO-DIMM. It consists of 16 pieces of 64Mx8 DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS128MSQ64V6J is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets. Synchronous design allows precise cycle control with the use of the system clock. Data I/O transactions are possible on both edges of DQS. A range of operation frequencies and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features:

• RoHS compliant products.
• JEDEC standard 1.8V ± 0.1V power supply
• VDDQ = 1.8V ± 0.1V
• Max clock frequency: 333MHz; 667Mb/s per pin.
• Posted CAS
• Programmable CAS latency: 3, 4, 5
• Programmable additive latency: 0, 1, 2, 3, and 4
• Write latency (WL) = Read latency (RL) - 1
• Burst length: 4, 8 (interleave/nibble sequential)
• Programmable sequential/interleave burst mode
• Bi-directional differential data-strobe (single-ended data-strobe is an optional feature)
• Off-chip driver (OCD) impedance adjustment
• MRS cycle with address key programs
• On-die termination
• Serial presence detect with EEPROM.