Name: M425R4GA3BB0-CWM
Brand: Samsung
SKU: 49760132
Price: 585 CHF
Availability: InStock

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The Samsung M425R4GA3BB0-CWM is a powerful DDR5 RAM specifically designed for use in PCs. With a storage capacity of 32 GB, divided into two modules of 16 GB each, this RAM offers high performance and efficiency for demanding applications and multitasking. The memory clock frequency of 5600 MHz ensures fast data transfer rates, while the CAS latency of 46 guarantees responsive performance. The SO-DIMM form factor with 262 pins makes it ideal for compact systems and laptops that require high memory capacity. With an operating voltage of just 1.1 volts, this RAM is also energy-efficient, contributing to a reduction in overall power consumption. The unbuffered RAM chip provides a direct connection between the RAM and the CPU, further optimizing performance.

- High storage capacity of 32 GB for demanding applications
- Fast memory clock frequency of 5600 MHz for improved performance
- Energy-efficient operating voltage of 1.1 volts
- Unbuffered design for direct communication with the CPU.

Actual product image Samsung M425R4GA3BB0-CWM (2 x 16GB, 5600 MHz, DDR5-RAM, SO-DIMM)

Key specifications

Memory configuration

Memory type

Storage clock frequency

RAM buffer

Technologies and mechanisms in the main memory that improve stability and reliability by reducing electrical loads or ensuring data integrity through error correction.

CAS latency

CAS latency is the delay time which elapses between the moment a memory controller tells the memory module to access a particular column in a selected row, and the moment the data from the given array location is available on the module's output pins.

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