PHS-memory RAM suitable for Buffalo WS5420RN
Buffalo WS5420RN, 1 x 16GBDelivered between Mon, 13.4. and Wed, 15.4.
More than 10 pieces in stock at supplier
More than 10 pieces in stock at supplier
free shipping
Memory configuration2
Product details
The RAM from PHS-memory is specifically designed for the Buffalo WS5420RN model and offers a storage capacity of 16 GB. This memory is equipped with a clock frequency of 2400 MHz and utilizes DDR4 technology, known for its high efficiency and speed. The SO-DIMM form factor allows for easy integration into compatible systems. Additionally, the RAM features an Error Correcting Code (ECC) that enhances data integrity and corrects errors during operation. With an operating voltage of 1.2 volts, this RAM is not only powerful but also energy-efficient, making it an ideal choice for users who value reliability and performance.
- 16 GB storage capacity for improved multitasking capabilities
- DDR4 technology for higher speed and efficiency
- Error Correcting Code (ECC) to enhance data integrity
- Low operating voltage of 1.2 volts for energy efficiency.
Compatible brand | Buffalo |
RAM for model | Buffalo WS5420RN |
Memory configuration | 1 x 16GB |
Memory type | DDR4-RAM |
Storage clock frequency | 2400 MHz |
RAM buffer | Error Correcting Code |
Item number | 22343785 |
Manufacturer | PHS-memory |
Category | RAM Model-specific |
Manufacturer no. | SP345511 |
Release date | 16.9.2022 |
Compatible brand | Buffalo |
RAM for model | Buffalo WS5420RN |
Memory configuration | 1 x 16GB |
Memory type | DDR4-RAM |
Storage clock frequency | 2400 MHz |
Storage capacity (RAM) per module | 16 GB |
Memory chip | DDR4 |
Memory form factor | SO-DIMM |
Number of pins | 260x |
RAM buffer | Error Correcting Code |
Voltage | 1.20 V |
CO₂ emissions | 81.33 kg |
Climate contribution | CHF 1.93 |
Specifications may include unverified machine translations.
30-day right of return
5 years Warranty (Bring-in)