Dynamic random-access memory (DRAM) is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit. The capacitor can be either charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. Since capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically. Because of this refresh requirement, it is a dynamic memory as opposed to SRAM and other static memory.
The main memory (the "RAM") in personal computers is Dynamic RAM (DRAM). It is the RAM in laptop, notebook and workstation computers as well as some of the RAM of home game consoles (PlayStation3, Xbox 360 and Wii).
Computer data storage, often called storage or memory, is a technology consisting of computer components and recording media used to retain digital data. It is a core function and fundamental component of computers.
A laptop, also called a notebook, is a personal computer for mobile use. A laptop integrates most of the typical components of a desktop computer, including a display, a keyboard, a pointing device (a touchpad, also known as a trackpad, and/or a pointing stick) and speakers into a single unit. A laptop is powered by mains electricity via an AC adapter, and can be used away from an outlet using a rechargeable battery.
Ein Speichermodul oder Speicherriegel ist eine kleine Leiterplatte, auf der mehrere Speicherbausteine (Dynamisches RAM in Form von integrierten Schaltkreisen) aufgelötet sind. Speichermodule bilden oder erweitern den Arbeitsspeicher elektronischer Geräte wie Computer oder Drucker und werden dort in speziell dafür vorgesehene Steckplätze gesteckt.
DDR-SDRAM („Double Data Rate Synchronous Dynamic Random Access Memory“) ist ein Typ von Random Access Memory (RAM), den es aktuell in drei Kategorien gibt. DDR-SDRAM mit 184 Kontakten, DDR2-SDRAM mit 240 Kontakten und DDR3-SDRAM ebenfalls mit 240 Kontakten. Verwendet werden sie hauptsächlich für Speichermodule des DIMM- bzw. SO-DIMM-Standards als Arbeitsspeicher in PCs und Laptops.
Random-access memory is a form of computer data storage. A random-access device allows stored data to be accessed directly in any random order. In contrast, other data storage media such as hard disks, CDs, DVDs and magnetic tape, as well as early primary memory types such as drum memory, read and write data only in a predetermined order, consecutively, because of mechanical design limitations. Therefore the time to access a given data location varies significantly depending on its physical location.
A DIMM or dual in-line memory module, comprises a series of dynamic random access memory integrated circuits. These modules are mounted on a printed circuit board and designed for use in personal computers, workstations and servers. DIMMs began to replace SIMMs (single in-line memory modules) as the predominant type of memory module as Intel P5-based Pentium processors began to gain market share.
The main difference between SIMMs and DIMMs is that DIMMs have separate electrical contacts on each side of the module, while the contacts on SIMMs on both sides are redundant. Another difference is that standard SIMMs have a 32-bit data path, while standard DIMMs have a 64-bit data path.
In addition to bandwidth and capacity variants, modules can 1. Optionally implement ECC, which is an extra data byte lane used for correcting minor errors and detecting major errors for better reliability. Modules with ECC are identified by an additional ECC in their designation. 2. Be "registered", which improves signal integrity (and hence potentially clock speed and physical slot capacity) by electrically buffering the signals at a cost of an extra clock of increased latency. Those modules are identified by an additional R in their designation, whereas non-registered (a.k.a. "unbuffered") RAM may be identified by an additional U in the designation. 3. Be Fully buffered modules, which are designated by F or FB and do not have the same notch position as other classes. Fully buffered modules cannot be used with motherboards that are made for registered modules, and the different notch position physically prevents their insertion.
unbuffered
CAS latency
i
CAS latency
CAS latency is the delay time which elapses between the moment a memory controller tells the memory module to access a particular column in a selected row, and the moment the data from the given array location is available on the module's output pins.
Der Parameter tRCD (RAS-to-CAS delay, row-to-column delay) beschreibt bei einem DRAM die Zeit, die nach der Aktivierung einer Wortleitung (activate) verstrichen sein muss, bevor ein Lesekommando (read) gesendet werden darf.
Der Parameter „tRP“ („Row Precharge Time“) beschreibt die Zeit, die nach einem Precharge-Kommando mindestens verstrichen sein muss, bevor ein erneutes Kommando zur Aktivierung einer Zeile in der gleichen Bank gesendet werden darf.
The voltage between two points is a short name for the electrical force that would drive an electric current between those points. Specifically, voltage is equal to energy per unit charge. In the case of static electric fields, the voltage between two points is equal to the electrical potential difference between those points. In the more general case with electric and magnetic fields that vary with time, the terms are no longer synonymous.
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Ja, passt. Habe diese letzten Freitag im neuen iMac verbaut. Auch eine Kombination mit den bestehenden RAM von Apple ist möglich bei voller Geschwindigkeit (2400 mhz). Speicher für volle Leistung immer im 2er Pack aufrüsten, also zB 2x4 von Apple schon drin plus 2x16 von kingston. Gibt dann 40 GB. Das entspricht meiner Konfiguration. Gruss, Tom
