Vishay IR-Fototransistor 850 nm 70 V T-1 3/4 5 mm

The IR phototransistor from Vishay is a highly advanced component specifically designed for applications in infrared technology. With a sensitivity at a wavelength of 850 nm, this transistor is ideal for various optoelectronic applications. It offers a maximum collector-emitter voltage of 70 V and a maximum collector current of 50 mA, making it a reliable choice for precise control and detection tasks. The fall time of up to 2.3 µs ensures fast response times, while the collector-emitter saturation voltage of only 0.3 V guarantees high efficiency. With a compact T-1 3/4 package and a diameter of 5 mm, this phototransistor is easy to integrate into various circuits and delivers excellent performance across a wide range of applications.

• Maximum collector-emitter voltage of 70 V
• Fast fall time of up to 2.3 µs
• High sensitivity at 850 nm wavelength
• Compact design in T-1 3/4 package.