PHS-memory 4GB RAM memory for Samsung NP-R730-JB04 DDR3 SO DIMM 1066MHz
Samsung NP-R730-JB04, 1 x 4GBDelivered between Mon, 28.7. and Thu, 31.7.
More than 10 pieces in stock at third-party supplier
More than 10 pieces in stock at third-party supplier
Supplied by
JACOB DE
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Product details
The PHS-memory 4GB RAM is specifically designed for the Samsung NP-R730-JB04 model and offers a reliable and powerful memory upgrade. With a memory clock frequency of 1066 MHz and the DDR3 SO-DIMM form factor, this RAM is an ideal choice for users looking to enhance their laptop's performance. The 4 GB memory capacity allows for improved multitasking capabilities and ensures that applications run smoothly. The memory is designed with a voltage of 1.5 volts, making it energy-efficient while ensuring system stability. The easy installation and 100% compatibility with the Samsung NP-R730-JB04 make this RAM a practical solution for anyone looking to optimize their device's performance.
- 100% compatible with Samsung NP-R730-JB04
- Energy-efficient with 1.5 volts voltage
- Improved multitasking capability with 4 GB capacity.
Compatible brand | Samsung |
Compatible model | Samsung NP-R730-JB04 |
Memory configuration | 1 x 4GB |
Memory type | DDR3-RAM |
Storage clock frequency | 1066 MHz |
Item number | 14321257 |
Manufacturer | PHS-memory |
Category | RAM Model-specific |
Manufacturer no. | SP193863 |
Release date | 15.11.2020 |
Compatible brand | Samsung |
Compatible model | Samsung NP-R730-JB04 |
Memory configuration | 1 x 4GB |
Memory type | DDR3-RAM |
Storage clock frequency | 1066 MHz |
Storage capacity (RAM) per module | 4 GB |
Memory chip | LPDDR3 |
Memory form factor | SO-DIMM |
Number of pins | 204 x |
Voltage | 1.50 V |
CO₂-Emission | |
Climate contribution |
Specifications may include unverified machine translations.
30-day right of return
5 years Warranty (Bring-in)
1 additional offer