PHS-memory 4GB RAM memory for Packard Bell EASYNOTE LE11BZ ENLE11BZ-4504G50Mnks DDR3 SO DIMM
Packard Bell EasyNote LE11BZ-125GE, 1 x 4GBDelivered between Mon, 28.7. and Thu, 31.7.
More than 10 pieces in stock at third-party supplier
More than 10 pieces in stock at third-party supplier
Supplied by
JACOB DE
free shipping
Product details
The 4GB RAM memory from PHS-memory is specifically designed for the Packard Bell EasyNote LE11BZ-125GE, offering a reliable and powerful upgrade to your device's memory. With a storage capacity of 4 gigabytes and a clock speed of 1333 megahertz (MHz), this DDR3 SO-DIMM memory enhances multitasking capabilities and speeds up data processing. Its compatibility with the Packard Bell EasyNote LE11BZ-125GE ensures easy installation and optimal performance. This memory is ideal for users looking to upgrade their devices for smoother operation of applications and programs. With a voltage of 1.5 volts and LPDDR3 chip technology, this RAM is an efficient choice for modern demands.
- Compatible with Packard Bell EasyNote LE11BZ-125GE
- 4GB storage capacity for improved performance
- 1333 MHz clock speed for fast data processing
- SO-DIMM form factor for easy installation.
Compatible brand | Packard Bell |
Compatible model | Packard Bell EasyNote LE11BZ-125GE |
Memory configuration | 1 x 4GB |
Memory type | DDR3-RAM |
Storage clock frequency | 1333 MHz |
Item number | 14321493 |
Manufacturer | PHS-memory |
Category | RAM Model-specific |
Manufacturer no. | SP274768 |
Release date | 15.11.2020 |
Compatible brand | Packard Bell |
Compatible model | Packard Bell EasyNote LE11BZ-125GE |
Memory configuration | 1 x 4GB |
Memory type | DDR3-RAM |
Storage clock frequency | 1333 MHz |
Storage capacity (RAM) per module | 4 GB |
Memory chip | LPDDR3 |
Memory form factor | SO-DIMM |
Number of pins | 204 x |
Voltage | 1.50 V |
CO₂-Emission | |
Climate contribution |
Specifications may include unverified machine translations.
30-day right of return
5 years Warranty (Bring-in)
1 additional offer