Ixys IXTH360N055T2 MOSFET 1 N-channel 935 W TO-247AD

The IXYS IXTH360N055T2 is a powerful N-channel MOSFET designed for demanding applications in electronics. With a maximum rated power of 935 watts and a breakdown voltage of 55 volts, this transistor offers high efficiency and reliability. The MOSFET is housed in a TO-247AD package, allowing for easy mounting through hole-through. The operating temperature ranges from -55 °C to +175 °C, making it suitable for various environments. With a low R(DS)(on) of 2.4 mΩ and a maximum drain current of 360 A, this transistor is ideal for applications requiring high currents and voltages. The TrenchT2™ technology ensures improved performance and efficiency, while specific characteristics such as a gate charge of 330 nC and an input capacitance of 20,000 pF enable precise control.

• Maximum operating temperature of +175 °C and minimum of -55 °C
• Low R(DS)(on) of 2.4 mΩ for high efficiency
• Maximum drain current of 360 A
• Input capacitance C(ISS) of 20,000 pF
• TrenchT2™ technology for enhanced performance.