High Performance GaN Light-Emitting Diode

The High Performance GaN Light-Emitting Diode is an advanced LED based on InGaN/GaN technology. These LEDs are characterized by their high reliability and efficiency, making them an ideal choice for various applications in lighting technology. The performance of these diodes has been extensively studied, taking into account different emission wavelengths and geometries. The tests conducted include the analysis of current-voltage characteristics, the 1/f noise spectrum, leakage currents, and static resistance. Additionally, the diodes underwent a 1000-hour continuous current stress test to assess optical output degradation. The results of these studies provide valuable insights into the performance and longevity of these LEDs.

• High reliability and efficiency due to InGaN/GaN technology
• Comprehensive performance analyses, including current-voltage characteristics and noise spectrum
• Long-term stress test to evaluate optical output degradation.